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features extremely rugged for harsh operating environments over-temperature protection over-current protection active drain-to-source clamp esd protection lead compatible with standard power mosfet low operating input current monolithic construction irsf3011 (note: for new designs, we recommend irs new products ips021 and ips021l) fully protected power mosfet switch data sheet no.pd 60133-h applications solenoid driver dc motor driver description the irsf3011 is a three-terminal monolithic smart power mosfet with built-in short circuit, over-temperature, esd and over-voltage protections. the on-chip protection circuit latches off the power mosfet in case the drain current exceeds 7a (typical) or the junction temperature exceeds 165c (typical) and keeps it off until the input is driven low. the drain to source voltage is actively clamped at 55v (typical), prior to the avalanche of power mosfet, thus impro ving its performance during turn-off with inductive loads. the input current requirements are very low (300a) which makes the irsf3011 compatible with most existing designs based on standard power mosfets. available packages 3 lead to220ab 3 lead sot223 block diagram input drain source v ds(clamp) 50v r ds(on) 200m w i ds(sd) 7a t j(sd) 165 o c e as 200mj product summary 1 www.irf.com
irsf3011 2 www.irf.com symbol parameter min. typ. max. units test conditions v ds,clamp drain to source clamp voltage 50 54 v i ds = 10ma 5662 i ds = 6a, t p = 700 m s r ds(on) drain to source on resistance 155 200 v in = 5v, i ds = 2a 200 m w v in = 4v, i ds = 2a 115 v in = 10v, i ds = 2a i dss drain to source leakage current 10 v ds = 12v, v in = 0v 100 m av ds = 50v, v in = 0v 10 250 v th input threshold voltage 1.5 2.0 2.5 v v ds = 5v, i ds = 10ma i i,on input supply current (normal operation) 0.25 0.6 v in = 5v 0.35 0.85 ma v in = 10v i i, off input supply current (protection mode) 0.5 1.0 v in = 5v 0.6 1.2 v in = 10v v in, clamp input clamp voltage 10 10.8 v i in = 10ma v sd body-drain diode forward drop a 1.2 1.5 i ds = -9a, r in = 1k w static electrical characteristics (t c = 25 o c unless otherwise specified.) v ds =40v,v in =0v,t c =150 o c absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (t c = 25 o c unless otherwise specified.) symbol parameter min. max. units t est conditions v ds, max continuous drain to source voltage 50 v v in, max continuous input voltage -0.3 10 i ds continuous drain current self limited a p d power dissipation 30 t c 25 o c, to220 3 t c 25 o c, sot223 e as unclamped single pulse inductive energy 200 mj v esd1 electrostatic discharge voltage (human body model) 4000 v 100pf, 1.5k w v esd2 electrostatic discharge voltage (machine model) 1000 200pf, 0 w t jop operating junction temperature range -55 150 t stg storage temperature range -55 150 o c t l lead temperature (soldering, 10 seconds) 300 w symbol parameter min. typ. max. units test conditions rth jc junction to case 4 to-220ab rth ja junction to ambient 60 rth jc junction to case 40 sot-223 rth ja junction to pcb 60 thermal characteristics o c/w
irsf3011 3 www.irf.com n otes : ? when mounted on a 1" square pcb (fr-4 or g10 material). for recommended footprint and soldering techniques, refer to international rectifier application note an-994. - e as is tested with a constant current source of 6a applied for 700 m s with v in = 0v and starting t j = 25 o c. ? input current must be limited to less than 5ma with a 1k w resistor in series with the input when the body-drain diode is forward biased. switching electricalcharacteristics (v cc = 14v, resistive load (r l ) = 5 w , t c = 25c.) please refer to figure 3 for switching time definitions. symbol parameter min. typ. max. units t est conditions t don turn-on delay time 160 250 v in = 5v 90 v in = 10v t r rise time 650 1200 v in = 5v 250 ns v in = 10v t doff turn-off delay time 250 350 v in = 5v 300 v in = 10v t f fall time 180 350 v in = 5v 170 v in = 10v symbol parameter min. typ. max. units t est condition s i ds(sd) over-current shutdown threshold 5 7 10 a v in = 5v t j(sd) over temperature shutdown threshold 155 165 o cv in = 5v, i ds = 2a v protect min. input voltage for over-temp function 3 v t iresp over current response time 4 m s see figure 4 for definition t iblank over current blanking time 4 see figure 4 for definition i peak peak short circuit current 16 a see figure 4 for definition v reset protection reset voltage 1.3 v t reset protection reset time 8 m s see figure 5 for definition t tresp over-temperature response time 12 see figure 6 for definition protection characteristics (t c = 25 o c unless otherwise specified.) symbol parameter min. typ. max. units t est conditions v ds,clamp drain-to-source clamp voltage t.c. 18.2 i ds = 10ma v th input threshold voltage t.c. -2.7 mv/ o cv ds = 5v, i ds = 10ma v in,clamp input clamp voltage t.c. 7.0 i in = 10ma i ds(sd) over-current shutdown threshold t.c. -9.8 ma/ o cv in = 5v temperature coefficients of electrical characteristics (please see figures 7 through 18 for more data on thermal characteristics of other electrical parameters.
irsf3011 4 www.irf.com irgb 01-3026 01 case outline 3 lead - to220 notes: 2 2x lead assignments part number (2) d 1 2 3 in d s 3 lead - sot223 irsf3011l 1 2 3 in d s 3 lead - to220 2 (d) irsf3011
irsf3011 5 www.irf.com irgb x01-3032 00 case outline 3 lead - sot-223
irsf3011 6 www.irf.com tape & reel - sot223 01-0028 05 / 01-0008 02 figure 3 definition of switching times 50% 90% 10% v ds v in t t t don t r t doff t f figure 4 definition of i peak , t iblank , t iresp i ds v in t t i peak t i blank t i resp short applied before turn-on short applied after turn-on 5v vcc = 14v = 0 r l
irsf3011 7 www.irf.com fig. 4 - on resistance vs. temperature temperature (c) rds(on) (mohm) 50 100 150 200 250 300 -50-25 0 255075100125150 vin = 10v ids = 4a vin = 5v figure 7 on resistance vs. drain-to-source current ids (a) rds(on) (mohm) 100 125 150 175 200 225 250 12345678 vin = 4v vin = 5v vin = 8v vin = 10v t = 25c figure 8 on resistance vs. temperature figure 6 definition of t tresp figure 5 definition of t reset i ds v in t t 5v vcc = 14v = 1 mh r l i ds(sd) t < reset t t > reset t i ds v in t t t t resp 5v vcc = 14v = 10 r l w + 5c t j = t jsd
irsf3011 8 www.irf.com figure 11 input current vs. input voltage figure 12 input current vs.temperature input voltage (volts) input current (ma) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 01234567891011 iin,off t=25c iin,on temperature (c) input current (ma) 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 iin,on iin,off vin = 5v figure 9 over-current shutdown threshold vs. input voltage figure 10 over-current shutdown threshold vs.temperature input voltage (volts) shut down current (a) 6 6.5 7 7.5 8 45678910 t = 25c temperature (c) shut down current (a) 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150 vin = 5v
irsf3011 9 www.irf.com figure 13 turn-on characteristics vs. input voltage figure 14 turn-on characteristics vs. temperature input voltage (volts) rise time, on delay (s) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 34567891011 on delay rise time t = 25c temperature (c) rise time, on delay (s) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 on delay rise time vin = 5v figure 16 turn-off characteristics vs. temperature temperature (c) fall time, off delay (s) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 off delay fall time vin = 5v input voltage (volts) fall time, off delay (s) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 34567891011 off delay fall time t = 25c ) figure 15 turn-off characteristics vs. input voltage
irsf3011 10 www.irf.com introduction protected monolithic power mosfets offer simple, cost effective solutions in applications where ex- treme operating conditions can occur. the margin between the operating conditions and the absolute maximum values can be narrowed, resulting in better utilization of the device and lower cost. esd protection also reduces the off-circuit failures during handling and assembly. general description the irsf3011 is a fully protected monolithic n- channel logic level power mosfet with 200mw (max) on- resistance. the built-in protections in clude over-current, over-temperature, esd and over-volt- age. the over-current and over-temperature protections make the irsf3011 / irsf3012 indestructible under any load conditions in switching or in linear applica- tions. the built-in esd protection minimizes the risk of esd damage when the device is off-cir cuit. the irsf3011 / irsf3012 is fully characterized for avalanche operation and can be used for fast de- energization of inductive loads. the to-220 packaged irsf3011 / irsf3012 of fers an easy upgrade with direct pin-to-pin replacement from non-protected devices. block diagram as illustrated in figure a1, a zener diode between the input and the source provides the esd protection for the input and also limits the voltage applied to the input to 10v. the r-s flip-flop memorizes the occurrence of an error condition and controls the q2 and q3 switches. the flip-flop can be cleared by holding the input low for the specified minimum duration. comp1 and comp2 comparators are used to com- pare the over-current and over-temperature signals with the built-in reference. either comparator can reset the fault flip-flop and turn q1 off. during fault condition, q2 disconnects the gate of q1 from the input, and q3 shorts the gate and source of q1, resulting in rapid turn-off of q1. the zener diode between the gate and drain of q1 turns q1 on when the drain to source voltage exceeds 55v. application information figure 17 source-drain diode forward voltage figure 18 unclamped single pulse inductive energy to failure vs. starting junction temperature source to drain voltage (volts) reverse drain current (a) 1 10 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 t = 25c t = 150c starting junction temperature (c) single pulse energy to failure (mj) 0 250 500 750 1000 1250 1500 1750 2000 0 255075100125150 ids = 4a vdd=25v
irsf3011 11 www.irf.com figure a1. block diagram figure a2. waveforms switching clamped inductive load using 5v input voltage the turn-on speed is limited by the channel resistance of q2 and the gate charge requirements of q1. the typical switching waveforms at 5v input voltage are shown in figure a2. using higher input voltage will improve the turn-on time but it will not affect the turn- off switching speed. input voltage 5v/div. drain current: 1a/div. drain voltage 5v/div. time: 1 m sv/div. switching characteristics in the irsf3011, the control logic and the protection circuits are powered from the input pin. when positive voltage appears at the input pin, the r-s flip-flop turns q2 on and connects the gate of the main device to the input. figure a3. switching waveforms with 7v input voltage input voltage 5v/div. drain voltage 5v/div. drain current: 1a/div. time: 1 m sv/div. the typical waveforms at 7v input voltage are shown in figure a3. in typical switching applications (below 60khz) the difference in switching losses bet ween the irsf3011 / irsf3012 and the same size standard mosfet is negligible. over-current protection when the drain current exceeds the preset limit, the protection circuit resets the internal flip-flop and turns q1 off. normal operation can be restored by holding the input voltage below the specified threshold level (approx. 1.3v) for the specified m inimum t reset time. the typical waveforms at over-current shut-down are shown in figure a4. after turn-on, the current in the inductor at the drain starts ramping up. at about 7a, the over-current protection shuts down the device. over-temperature protection figure a5 illustrates the operation of the over-tem- perature protection. the irsf3011 / irsf3012 switches a 2w resistive load to a 10v power supply. when the thermal balance is established, the junc- tion temperature is limited on a pulse-by-pulse basis.
irsf3011 12 www.irf.com over-voltage protection when the drain-to-source voltage exceeds 55v, the zener diode between gate and drain turns the irsf3011 / irsf3012 on before the breakdown voltage of the drain-source diode is reached. this greatly en hances the energy the device can safely withstand during inductive load turn-offs compared to avalanche breakdown. thus the device can be used for fast de-energization of inductive loads. the absorbed energy is limited only by the maximum junction temperature. figure a4. waveforms at over-current shut-down time: 10 m sv/div. drain current: 2a/div. input voltage 5v/div. drain voltage 5v/div. world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2 tel: (905) 453-2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: 65 838 4630 ir taiwan: 16 fl. suite d..207, sec.2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 9/98 input voltage 10v/div. drain voltage 5v/div. drain current: 2a/div. time: 10 m sv/div. figure a5. over-temperature shut-down
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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